“Image for reference only. Specs are accurate.”
K4AAG085WA-BCWE Samsung DDR4 3200MHz 16GB DRAM Memory Chip
K4AAG085WA-BCWE Overview
Discover the Samsung DDR4-3200MHz 2Gx8 (16GB) DRAM Memory Chip, designed for optimal performance in a temperature range of 0 to 95°C TC. With a capacity of 16Gb, it features a RoHS-compliant BGA 78 ball package and delivers a data rate of 3200 MT/s, achieving a maximum clock speed of 1600 MHz and a minimum cycle time of 0.625ns.
Description
K4AAG085WA-BCWE Technical Specifications
Samsung DDR4 3200MHz 2Gx8 (16GB) DRAM Memory Chip
Manufacturer: Samsung
Product Name: DDR4 3200MHz 2Gx8 (16GB) DRAM Memory Chip
Brand: Samsung
Technology: DDR4
Capacity: 16Gb
Organization: 2Gx8
Bus-Width: x8
Package: BGA
Pin/Ball Count: 78
Voltage: 1.2V
Min. Cycle Time: 0.625ns
Max. Clock-Speed: 1600 MHz
Max. Data-Rate: 3200 MT/s
Temperature Range: 0 to 95°C TC
Automotive: No
This Samsung DRAM memory chip is engineered for high performance and reliability, making it suitable for demanding applications. With its 16GB capacity and efficient design, it ensures seamless multitasking and enhanced system responsiveness, ideal for both personal and professional use.
