M474B1G73BH0-YH9 Technical Specifications
Samsung 8GB PC3-10600 DDR3-1333MHz ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
Manufacturer: Samsung
Part Number: M474B1G73BH0-YH9
Memory Type: DDR3 SODIMM
Capacity: 8GB
Data Transfer Rate: 1333MHz
Pin Count: 204 Pins
Bus Type: PC3-10600
Error Correction: ECC Registered
Cycle Time: 1.5ns
CAS Latency: CL9
Memory Clock: 166MHz
Rank: Dual Rank
Voltage: 1.35V
This Samsung memory module is designed for optimal performance and reliability, making it a perfect choice for various computing applications. With low voltage operation and error correction capabilities, it ensures stability and efficiency for your systems.







