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647897R-B21 HP 8GB DDR3-1333MHz ECC Registered Memory

Name: 647897R-B21 HP 8GB RAM at discount
Brand: HPE
SKU: 647897R-B21
Price: 234.51 AED
Availability: InStock

SKU: 647897R-B21 Categories: HPE Memory - RAM, Memory - RAM Tags: 8GB RAM, DDR3 RAM, DIMM, ECC Registered, HP memory, Low Voltage Memory, PC3-10600, SDRAM Brand: HPE

647897R-B21 Overview

Discover the 647897R-B21 HP 8GB PC3-10600 DDR3-1333MHz ECC Registered CL9 240-Pin DIMM. This low voltage dual rank memory module operates at 1.35V, ensuring efficient performance and reliability for your computing needs.

234.51 AED

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Delivery Options (UAE)

Anywhere in the UAE

Fast and secure delivery across all UAE locations.

Express Delivery

Estimated: 1–2 business days

Priority delivery through selected courier partners.

Standard Delivery

Estimated: 2–4 business days

Affordable tracked delivery, subject to stock.

International Shipping

Worldwide delivery through courier and freight services.

Secure & Tracked Shipping

Carefully packed orders with tracking where available.

Payment Options

Secure Payments

Available payment methods are confirmed during checkout.

Purchase Orders Accepted

Available for approved companies and organizations.

Bank Transfer

Available for corporate and international orders.

Return & Warranty

30-Day Return Policy

Eligible products may be returned within 30 days, subject to approval, condition and return terms.

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Warranty Support

Warranty coverage depends on manufacturer terms and product condition.

Description

647897R-B21 Technical Specifications

HP 8GB PC3-10600 DDR3-1333MHz ECC Registered CL9 240-Pin DIMM Memory Module

Manufacturer: HP
Part Number: 647897R-B21
Memory Type: DDR3 SDRAM
Capacity: 8GB
Data Transfer Rate: 1333MHz
Pin Configuration: 240 Pin DIMM
Bus Speed: PC3-10600
Error Correction: Registered ECC
Cycle Time: 1.5ns
CAS Latency: CL9
Memory Clock Speed: 166MHz
Rank: Dual Rank (Rank 2)
Operating Voltage: 1.35V
This HP memory module is designed for robust performance, making it ideal for servers and workstations requiring reliable ECC memory. With its low voltage operation, it enhances power efficiency while maintaining high data integrity.

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