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HX429S17IB2K2/16 HyperX Impact DDR4 16GB Memory Kit
HX429S17IB2K2/16 Overview
Experience exceptional performance with the HyperX Impact DDR4 16GB memory kit. This kit includes two 8 GB SO-DIMM modules, designed for 260-pin slots, operating at a speed of 2933 MHz (PC4-23400) with a CAS latency of 17. It operates at a low voltage of 1.2 V, ensuring efficient power usage while delivering reliable memory performance.
2,932.33 AED
Description
HX429S17IB2K2/16 Technical Specifications
HyperX Impact DDR4 16GB
Type: DRAM
Product Type: Memory kit
Form Factor: SO-DIMM 260-pin
Module Height: 1.18 inches
Technology: DDR4 SDRAM
Storage Capacity: 16 GB (2 x 8 GB)
Registered or Buffered: Unbuffered
Data Integrity Check: Non-ECC
Module Configuration: 1024 x 64
Chips Organization: 1024 x 8
Memory Speed: 2933 MHz
Memory Specification Compliance: PC4-23400
Supply Voltage: 1.2 V
This memory kit is specifically designed to enhance the performance of laptops and compact systems, making it ideal for gamers and professionals seeking reliability and speed.
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