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HX429S17IB2K2/32 HyperX Impact DDR4 32GB Memory Kit

HX429S17IB2K2/32 Overview

Experience high-performance memory with the HyperX Impact DDR4 32GB kit, featuring 2 x 16 GB SO-DIMM modules. Designed for speed, it operates at 2933 MHz (PC4-23400) with a CL17 latency. This unbuffered, non-ECC memory runs at a low voltage of 1.2 V, making it an ideal choice for enhancing your system’s performance.

4,767.33 AED

Description

HX429S17IB2K2/32 Technical Specification

HyperX Impact DDR4 32GB

Type: DRAM
Product Type: Memory kit
Form Factor: SO-DIMM 260-pin
Module Height: 1.18 inches
Technology: DDR4 SDRAM
Storage Capacity: 32GB
Registered or Buffered: Unbuffered
Data Integrity Check: Non-ECC
Module Configuration: 2048 x 64
Memory Speed: 2933 MHz
Memory Specification Compliance: PC4-23400
Supply Voltage: 1.2 V
The HyperX Impact DDR4 32GB memory kit is engineered to deliver exceptional performance and efficiency. With two 16 GB modules, it ensures ample memory capacity for demanding applications. Operating at a speed of 2933 megahertz, this memory kit meets the PC4-23400 specification, making it suitable for various computing needs. Its unbuffered design and non-ECC feature provide reliable operation, while the low voltage requirement of 1.2 volts enhances energy efficiency.

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