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M386A8K40BM2-CTD7Y Samsung 64GB DDR4-2666MHz Memory

Name: M386A8K40BM2-CTD7Y Samsung Memory at discount
Brand: Samsung
SKU: M386A8K40BM2-CTD7Y
Price: 1736.00 AED
Availability: InStock

SKU: M386A8K40BM2-CTD7Y Categories: Memory - RAM, Samsung Memory - RAM Tags: 64GB RAM, DDR4 Memory, ECC RAM, LRDIMM, PC4-21300, Samsung Brand: Samsung

M386A8K40BM2-CTD7Y Overview

Experience high-performance memory with the M386A8K40BM2-CTD7Y from Samsung. This 64GB DDR4-2666MHz module is designed to enhance your system’s speed and efficiency, making it ideal for demanding applications and multitasking environments.

1,736.00 AED

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Delivery Options (UAE)

Anywhere in the UAE

Fast and secure delivery across all UAE locations.

Express Delivery

Estimated: 1–2 business days

Priority delivery through selected courier partners.

Standard Delivery

Estimated: 2–4 business days

Affordable tracked delivery, subject to stock.

International Shipping

Worldwide delivery through courier and freight services.

Secure & Tracked Shipping

Carefully packed orders with tracking where available.

Payment Options

Secure Payments

Available payment methods are confirmed during checkout.

Purchase Orders Accepted

Available for approved companies and organizations.

Bank Transfer

Available for corporate and international orders.

Return & Warranty

30-Day Return Policy

Eligible products may be returned within 30 days, subject to approval, condition and return terms.

View Refund & Returns Policy →

Warranty Support

Warranty coverage depends on manufacturer terms and product condition.

Description

M386A8K40BM2-CTD7Y Technical Specifications

Samsung 64GB DDR4-2666MHz Memory Module

Manufacturer: Samsung
Part Number: M386A8K40BM2-CTD7Y
This high-capacity memory module features a DDR4 LRDIMM type, offering 64GB of storage for optimal performance. With a data transfer rate of 2666MHz, it ensures swift data handling and processing. The module is equipped with 288 pins and operates on a PC4-21300 bus type. It also includes Error Correction through Load Reduced ECC technology, enhancing reliability. The memory operates at a voltage of 1.2V, with a CAS latency of CL19 and a rank of 4, making it a robust choice for high-performance computing needs.

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