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M391A1G43DB0-CPB Samsung 8GB DDR4-2133MHz RAM Module

Name: M391A1G43DB0-CPB Samsung RAM at discount
Brand: Samsung
SKU: M391A1G43DB0-CPB
Price: 726.00 AED
Availability: InStock

SKU: M391A1G43DB0-CPB Categories: Memory - RAM, Samsung Memory - RAM Tags: 8GB RAM, DDR4 Memory, ECC RAM, PC4-17000, Samsung RAM Brand: Samsung

M391A1G43DB0-CPB Overview

Discover the M391A1G43DB0-CPB Samsung 8GB DDR4-2133MHz RAM module, designed for optimal performance. This high-quality memory upgrade offers reliable speed and efficiency, perfect for enhancing your system’s capabilities.

726.00 AED

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Delivery Options (UAE)

Anywhere in the UAE

Fast and secure delivery across all UAE locations.

Express Delivery

Estimated: 1–2 business days

Priority delivery through selected courier partners.

Standard Delivery

Estimated: 2–4 business days

Affordable tracked delivery, subject to stock.

International Shipping

Worldwide delivery through courier and freight services.

Secure & Tracked Shipping

Carefully packed orders with tracking where available.

Payment Options

Secure Payments

Available payment methods are confirmed during checkout.

Purchase Orders Accepted

Available for approved companies and organizations.

Bank Transfer

Available for corporate and international orders.

Return & Warranty

30-Day Return Policy

Eligible products may be returned within 30 days, subject to approval, condition and return terms.

View Refund & Returns Policy →

Warranty Support

Warranty coverage depends on manufacturer terms and product condition.

Description

M391A1G43DB0-CPB Technical Specifications

Samsung 8GB DDR4-2133MHz RAM Module

Manufacturer: Samsung
Part Number: M391A1G43DB0-CPB
Memory Type: DDR4 SDRAM
Capacity: 8GB
Data Transfer Rate: 2133MHz
Pins: 288 Pin
Bus Type: PC4-17000
Error Correction: ECC
Cycle Time: 0.93ns
CAS Latency: CL15
Memory Clock: 266MHz
Rank: Dual Rank
Voltage: 1.2V
This Samsung RAM module is engineered to provide exceptional performance and reliability, making it a perfect choice for upgrading your computer’s memory. With its dual rank design and error-correcting capabilities, it ensures data integrity and stability during intensive tasks.

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