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M393A2G40EB1-CPB3Q Samsung 16GB DDR4-2133MHz RAM

Name: M393A2G40EB1-CPB3Q Samsung RAM at discount
Brand: Samsung
SKU: M393A2G40EB1-CPB3Q
Price: 146.62 AED
Availability: InStock

SKU: M393A2G40EB1-CPB3Q Categories: Memory - RAM, Samsung Memory - RAM Tags: DDR4 16GB, ECC memory, High-Speed RAM, PC4-17000, Samsung RAM Brand: Samsung

M393A2G40EB1-CPB3Q Overview

Discover the M393A2G40EB1-CPB3Q by Samsung, a high-performance 16GB DDR4-2133MHz RAM module designed for optimal efficiency. This memory solution is ideal for enhancing your system’s speed and reliability, ensuring smooth multitasking and seamless operation.

146.62 AED

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Delivery Options (UAE)

Anywhere in the UAE

Fast and secure delivery across all UAE locations.

Express Delivery

Estimated: 1–2 business days

Priority delivery through selected courier partners.

Standard Delivery

Estimated: 2–4 business days

Affordable tracked delivery, subject to stock.

International Shipping

Worldwide delivery through courier and freight services.

Secure & Tracked Shipping

Carefully packed orders with tracking where available.

Payment Options

Secure Payments

Available payment methods are confirmed during checkout.

Purchase Orders Accepted

Available for approved companies and organizations.

Bank Transfer

Available for corporate and international orders.

Return & Warranty

30-Day Return Policy

Eligible products may be returned within 30 days, subject to approval, condition and return terms.

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Warranty Support

Warranty coverage depends on manufacturer terms and product condition.

Description

M393A2G40EB1-CPB3Q Technical Specifications

Samsung 16GB DDR4-2133MHz Memory

Manufacturer: Samsung
Part Number: M393A2G40EB1-CPB3Q
This DDR4 SDRAM memory module features a substantial capacity of 16GB, making it an excellent choice for demanding applications. It operates at a data transfer rate of 2133MHz, ensuring efficient performance for various computing tasks. With 288 pins and a bus type of PC4-17000, this RAM is designed for compatibility with a wide range of systems. Additionally, it includes ECC registered error correction, providing enhanced reliability for critical applications. The cycle time is 0.93ns, and it operates at a memory clock speed of 266MHz, with a CAS latency of CL15. This RAM is a dual-rank module, functioning at a voltage of 1.2V, making it both powerful and energy-efficient.

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