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M393B1K70CHD-CH9 Samsung 8GB DDR3 PC3-10600 Memory

Name: M393B1K70CHD-CH9 Samsung Memory at discount
Brand: Samsung
SKU: M393B1K70CHD-CH9
Price: 195.28 AED
Availability: InStock

SKU: M393B1K70CHD-CH9 Categories: Memory - RAM, Samsung Memory - RAM Tags: 240-pin, 8GB RAM, DDR3, dual rank, ECC Registered, Memory Module, PC3-10600, Samsung, SDRAM Brand: Samsung

M393B1K70CHD-CH9 Overview

M393B1K70CHD-CH9 is a Samsung 8GB PC3-10600 DDR3-1333MHz ECC Registered CL9 memory module designed for reliable performance in dual rank configurations. This 240-pin DIMM is ideal for enhancing system memory capacity and efficiency.

195.28 AED

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Delivery Options (UAE)

Anywhere in the UAE

Fast and secure delivery across all UAE locations.

Express Delivery

Estimated: 1–2 business days

Priority delivery through selected courier partners.

Standard Delivery

Estimated: 2–4 business days

Affordable tracked delivery, subject to stock.

International Shipping

Worldwide delivery through courier and freight services.

Secure & Tracked Shipping

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Available for approved companies and organizations.

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Available for corporate and international orders.

Return & Warranty

30-Day Return Policy

Eligible products may be returned within 30 days, subject to approval, condition and return terms.

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Warranty Support

Warranty coverage depends on manufacturer terms and product condition.

Description

M393B1K70CHD-CH9 Technical Specifications

Samsung 8GB PC3-10600 DDR3-1333MHz ECC Registered CL9 Memory Module

Manufacturer: Samsung
Part Number: M393B1K70CHD-CH9
Memory Type: DDR3 SDRAM
Capacity: 8GB
Data Transfer Rate: 1333MHz
Pin Count: 240 Pins
Bus Type: PC3-10600
Error Correction: ECC Registered
Cycle Time: 1.5ns
CAS Latency: CL9
Memory Clock: 166MHz
Rank: Dual Rank
Voltage: 1.5V
This memory module is engineered for high-performance computing, ensuring stable data integrity and efficient processing. The ECC (Error-Correcting Code) feature helps prevent data corruption, making it a suitable choice for servers and workstations. With a robust design, this memory is built to meet the demands of modern applications and multitasking environments.

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