“Image for reference only. Specs are accurate.”

M471B1G73BH0-YK0 Samsung 8GB DDR3-1600MHz Memory Module

Name: M471B1G73BH0-YK0 Samsung 8GB DDR3-1600MHz at discount
Brand: Samsung
SKU: M471B1G73BH0-YK0
Price: 281.31 AED
Availability: OutOfStock

SKU: M471B1G73BH0-YK0 Categories: Memory - RAM, Samsung Memory - RAM Tags: 8GB DDR3, non-ECC RAM, PC3-12800, Samsung RAM, SODIMM memory Brand: Samsung

M471B1G73BH0-YK0 Overview

Experience enhanced performance with the M471B1G73BH0-YK0 Samsung 8GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered memory module. This 204-Pin SoDimm operates at a low voltage of 1.35V, making it an ideal choice for efficient multitasking and improved system responsiveness.

281.31 AED

Out of stock

Compare

Add to wishlist

Delivery Options (UAE)

Anywhere in the UAE

Fast and secure delivery across all UAE locations.

Express Delivery

Estimated: 1–2 business days

Priority delivery through selected courier partners.

Standard Delivery

Estimated: 2–4 business days

Affordable tracked delivery, subject to stock.

International Shipping

Worldwide delivery through courier and freight services.

Secure & Tracked Shipping

Carefully packed orders with tracking where available.

Payment Options

Secure Payments

Available payment methods are confirmed during checkout.

Purchase Orders Accepted

Available for approved companies and organizations.

Bank Transfer

Available for corporate and international orders.

Return & Warranty

30-Day Return Policy

Eligible products may be returned within 30 days, subject to approval, condition and return terms.

View Refund & Returns Policy →

Warranty Support

Warranty coverage depends on manufacturer terms and product condition.

Description

M471B1G73BH0-YK0 Technical Specifications

Samsung 8GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered Memory Module

Manufacturer: Samsung
Part Number: M471B1G73BH0-YK0
Memory Type: SODIMM DDR3
Capacity: 8GB
Data Transfer Rate: 1600MHz
Pin Count: 204 Pins
Bus Type: PC3-12800
Error Correction: Non-ECC
Cycle Time: 1.25ns
CAS Latency: CL11
Memory Clock: 200MHz
Rank: Dual Rank
Voltage: 1.35V
This memory module is designed to deliver reliable performance and efficiency for various computing needs, making it suitable for both casual and professional use. With its low voltage operation, it enhances battery life in portable devices while ensuring optimal speed and responsiveness for demanding applications.

Customer Reviews

Reviews

There are no reviews yet.

Be the first to review “M471B1G73BH0-YK0 Samsung 8GB DDR3-1600MHz Memory Module”