M471B1G73EB0-YK0 Samsung 8GB DDR3-1600MHz Memory Module
M471B1G73EB0-YK0 Overview
Discover the M471B1G73EB0-YK0 Samsung 8GB PC3-12800 DDR3-1600MHz non-ECC Unbuffered memory module, designed for optimal performance. This 204-Pin SoDimm module operates at a low voltage of 1.35V, ensuring efficiency and reliability for your computing needs.
281.31 AED
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Description
M471B1G73EB0-YK0 Technical Specifications
Samsung 8GB PC3-12800 DDR3-1600MHz Non-ECC Unbuffered Memory Module
Manufacturer: Samsung
Part Number: M471B1G73EB0-YK0
Memory Type: SODIMM DDR3
Capacity: 8GB
Data Transfer Rate: 1600MHz
Pins: 204 Pin
Bus Type: PC3-12800
Error Correction: Non-ECC
Cycle Time: 1.25ns
CAS Latency: CL11
Memory Clock: 200MHz
Rank: Dual Rank
Voltage: 1.35V
This memory module is engineered for high performance and energy efficiency, making it ideal for various applications. Its dual-rank architecture and low voltage operation enhance system performance while minimizing power consumption. Upgrade your system with this reliable memory solution for improved multitasking and overall responsiveness.

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